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UT4430G-S08-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 UT4430G-S08-R
功能描述  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT4430G-S08-R 数据表(HTML) 3 Page - Unisonic Technologies

  UT4430G-S08-R Datasheet HTML 1Page - Unisonic Technologies UT4430G-S08-R Datasheet HTML 2Page - Unisonic Technologies UT4430G-S08-R Datasheet HTML 3Page - Unisonic Technologies UT4430G-S08-R Datasheet HTML 4Page - Unisonic Technologies UT4430G-S08-R Datasheet HTML 5Page - Unisonic Technologies UT4430G-S08-R Datasheet HTML 6Page - Unisonic Technologies  
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UT4430
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-333.A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Ta=25°C) (Note 2)
t≤10s
ID
18
A
Pulsed Drain Current (Note 3)
IDM
80
A
Avalanche Current (Note 3)
IAR
30
A
Repetitive avalanche energy (Note 3)
L=0.3mH
EAR
135
mJ
Power Dissipation (Ta=25°C)
PD
3
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface mounted on 1 in2 copper pad of FR4 board
3. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note)
θJA
59
75
°C/W
Note: Surface mounted on 1 in2 copper pad of FR4 board
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
30
V
Drain-Source Leakage Current
IDSS
VDS=30V,VGS=0V
1
µA
Gate-Source Leakage Current
IGSS
VGS=±20V, VDS=0V
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VD S=VGS, ID=250µA
1
1.8
2.5
V
On State Drain Current
ID(ON)
VGS =4.5V, VDS =5V
80
A
VGS=10V, ID=18A
4.7
5.5
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=15A
6.2
7.5
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
4660 6060 7270
pF
Output Capacitance
COSS
425
638
960
pF
Reverse Transfer Capacitance
CRSS
VDS=15V, VGS=0 V, f=1MHz
240
355
530
pF
Gate Resistance
RG
VGS=0V, VDS=0V, f=1MHz
0.2
0.45
0.9
Ω
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
12
16
ns
Turn-ON Rise Time
tR
8
12
ns
Turn-OFF Delay Time
tD(OFF)
51.5
70
ns
Turn-OFF Fall-Time
tF
VGS=10V,VDS=15V, RL=0.83Ω,
RGEN=3Ω
8.8
14
ns
Total Gate Charge
QG
80
103
124
nC
Gate Source Charge
QGS
18
nC
Gate Drain Charge
QGD
VGS=10 V, VDS=15 V, ID=18 A
15
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=1 A, VGS=0 V
0.7
1
V
Diode Continuous Forward Current
IS
4.5
A
Reverse Recovery Time
tRR
33.5
44
ns
Reverse Recovery Charge
QRR
IF=18A, dI/dt=100A/μs
22
30
nC



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