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UT4435L-S08-R 数据表(PDF) 4 Page - Unisonic Technologies |
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UT4435L-S08-R 数据表(HTML) 4 Page - Unisonic Technologies |
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4 / 5 page ![]() UT4435 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 5 www.unisonic.com.tw QW-R502-254.B TYPICAL CHARACTERISTICS Drain Current vs. Source to Drain Voltage Source to Drain Voltage, VSD (V) Switching Time Waveforms VDS 90% 10% tD(ON) tD(OFF) tF 10% 10% 90% 90% 0 0 VGS tR 0.2 0 0 0.5 0.8 0.4 0.6 2.0 1.0 2.5 3.0 1.0 1.5 0 50 Drain Current vs. Gate Threshold Voltage Gate Threshold Voltage, VTH (V) 250 100 150 200 300 Drain Current vs. Drain-Source Breakdown Voltage Drain-Source Breakdown Voltage, BVDSS(V) 0 0 50 30 250 10 100 150 200 300 20 50 40 350 400 450 0.2 0 0.4 0.8 0.6 Drain-Source On-State Resistance Characteristics Drain to Source Voltage, VDS (mV) 300 12 0 0 4 8 10 2 200 100 6 400 VGS=-10V, ID=-8.8A VGS=-4.5V, ID=-6.7A |
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