UT4812Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-350.B

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note 2)

6.9

A

Pulsed Drain Current (Note 3)

30

A

Power Dissipation

2

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ + 150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Surface Mounted on 1in

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

110

°C /W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

5

µA

ON CHARACTERISTICS

Gate Threshold Voltage

1

1.9

3

V

Drain-Source On-State Resistance (Note)

22.5

28

mΩ

34.5

42

mΩ

DYNAMIC PARAMETERS

Input Capacitance

680

820

pF

Output Capacitance

102

pF

Reverse Transfer Capacitance

77

108

pF

SWITCHING PARAMETERS

Turn-ON Delay Time

4.6

7

ns

Turn-ON Rise Time

4.1

6.2

ns

Turn-OFF Delay Time

20.6

30

ns

Turn-OFF Fall-Time

5.2

7.5

ns

Total Gate Charge

13.84

17

nC

Gate Source Charge

1.82

nC

Gate Drain Charge

3.2

nC

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

(Note)

0.76

1

V

Maximum Continuous Drain-Source

Diode Forward Current

3

A

Body Diode Reverse Recovery Time

16.5

20

ns

Body Diode Reverse Recovery Charge

7.8

10

nC

Note: Pulse width ≤300μs, duty cycle≤2%.