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UT4822L-S08-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 UT4822L-S08-R
功能描述  DUAL N-CHANNEL ENHANCEMENT MODE
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT4822L-S08-R 数据表(HTML) 3 Page - Unisonic Technologies

  UT4822L-S08-R Datasheet HTML 1Page - Unisonic Technologies UT4822L-S08-R Datasheet HTML 2Page - Unisonic Technologies UT4822L-S08-R Datasheet HTML 3Page - Unisonic Technologies UT4822L-S08-R Datasheet HTML 4Page - Unisonic Technologies UT4822L-S08-R Datasheet HTML 5Page - Unisonic Technologies UT4822L-S08-R Datasheet HTML 6Page - Unisonic Technologies  
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UT4822
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-149.D
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
8.5
A
Pulsed Drain Current
IDM
40
A
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient
θJA
74
110
°С/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
30
V
Drain-Source Leakage Current
IDSS
VDS=24V, VGS=0V
1
uA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250uA
1
1.8
3
V
VGS=10V, ID=8.5A
13.4
16
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=6A
21
26
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
1040 1250
pF
Output Capacitance
COSS
180
pF
Reverse Transfer Capacitance
CRSS
VGS=0V,VDS=15V,f=1.0MHz
110
pF
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
19.2
23
nC
Gate-Source Charge
QGS
2.6
nC
Gate-Drain Charge
QGD
VDS=15V, VGS=10V, ID=8.5A
4.2
nC
Turn-ON Delay Time
tD(ON)
5.2
7.5
ns
Turn-ON Rise Time
tR
4.4
6.5
ns
Turn-OFF Delay Time
tD(OFF)
17.3
25
ns
Turn-OFF Fall Time
tF
VDD=15V, VGS=10V, RG=3Ω,
RL =1.8Ω
3.3
5
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=1A, VGS=0V
0.76
1
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
3
A
Reverse Recovery Time
tRR
IF = 8.5A, dIF /dt = 100 A/μs
16.7
21
ns
Reverse Recovery Charge
QRR
6.7
10
nC



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