数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

UT5003G-S08-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 UT5003G-S08-R
功能描述  DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL)
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT5003G-S08-R 数据表(HTML) 3 Page - Unisonic Technologies

  UT5003G-S08-R Datasheet HTML 1Page - Unisonic Technologies UT5003G-S08-R Datasheet HTML 2Page - Unisonic Technologies UT5003G-S08-R Datasheet HTML 3Page - Unisonic Technologies UT5003G-S08-R Datasheet HTML 4Page - Unisonic Technologies UT5003G-S08-R Datasheet HTML 5Page - Unisonic Technologies UT5003G-S08-R Datasheet HTML 6Page - Unisonic Technologies UT5003G-S08-R Datasheet HTML 7Page - Unisonic Technologies UT5003G-S08-R Datasheet HTML 8Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 3 / 8 page
background image
UT5003
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 8
www.unisonic.com.tw
QW-R502-167.B
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
N-Channel:
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note3)
TC=25°C
ID
7
A
Pulsed Drain Current (Note3)
TC=25°C
IDM
20
A
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
P-Channel:
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note3)
TC=25°C
ID
-5
A
Pulsed Drain Current (Note3)
TC=25°C
IDM
-20
A
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note3)
θJA
62.5
/W
℃
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
30
V
Drain-Source Leakage Current
IDSS
VDS=24V, VGS=0V
1
uA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250uA
1
1.5
2.5
V
VGS=10V, ID=7A
20.5
27.5
mΩ
Drain-Source On-State Resistance (Note2)
RDS(ON)
VGS=4.5V, ID=6A
30
40
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
680
pF
Output Capacitance
COSS
105
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=15V, f=1MHz
75
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
4.6
7
ns
Turn-ON Rise Time
tR
4
6
ns
Turn-OFF Delay Time
tD(OFF)
20
30
ns
Turn-OFF Fall Time
tF
VDS=10V, VGS=10V, ID≒1A,
RG=3Ω
5
8
ns
Total Gate Charge (Note2)
QG
14
nC
Gate-Source Charge
QGS
1.9
nC
Gate-Drain Charge
QGD
VDS=0.5*BVDSS, VGS=10V,
ID=7A
3.3
nC



Html Pages

1 2 3 4 5 6 7 8


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com