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UT6302L-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT6302L-AE3-R
功能描述  P-CHANNEL ENHANCEMENT MOSFET
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT6302L-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UT6302L-AE3-R Datasheet HTML 1Page - Unisonic Technologies UT6302L-AE3-R Datasheet HTML 2Page - Unisonic Technologies UT6302L-AE3-R Datasheet HTML 3Page - Unisonic Technologies UT6302L-AE3-R Datasheet HTML 4Page - Unisonic Technologies UT6302L-AE3-R Datasheet HTML 5Page - Unisonic Technologies UT6302L-AE3-R Datasheet HTML 6Page - Unisonic Technologies  
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UT6302
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-363.E
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (VGS=-4.5V, Ta=25°C)
ID
-0.78
A
Pulsed Drain Current (Note 2)
IDM
-4.9
A
Peak Diode Recovery dv/dt (Note 3)
dv/dt
-5.0
V/nS
Power Dissipation (TA=25°C)
PD
540
mW
Linear Derating Factor above 25°C
4.3
mW /°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:1.
2.
3.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by TJ(MAX)
ISD≤-0.61A, di/dt≤76A/µs, VDD≤V(BR)DSS, TJ=150°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
230
°C/W
Note: Surface Mounted on FR-4 Board, t ≤ 5sec.
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0 V, ID=-250 µA
-20
V
Drain-Source Leakage Current
IDSS
VDS=-16V,VGS=0V
-1.0
µA
Gate-Source Leakage Current
IGSS
VGS=±12 V, VDS=0 V
±100
nA
Drain-Source Breakdown Voltage
△
BVDSS/△TJ ID=-1mA, Reference to 25°C
-4.9
mV/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID=-250µA
-0.70
-1.5
V
Static Drain-Source On-Resistance
RDS(ON)
VGS=-4.5V, ID=-0.61A (Note 2)
0.60
Ω
VGS=-2.7V, ID=-0.31A (Note 2)
0.90
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=-15V, VGS=0V, f=1.0MHz
97
pF
Output Capacitance
COSS
53
pF
Reverse Transfer Capacitance
CRSS
28
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=-4.5V, VDS=-16V
ID=-0.61A (Note 1, 2)
2.4
3.6
nC
Gate Source Charge
QGS
0.56
0.84
nC
Gate Drain Charge
QGD
1.0
1.5
nC
Turn-ON Delay Time
tD(ON)
VDD=-10V, ID=-0.61A,
RG=6.2Ω, RD=16Ω (Note 1, 2)
13
nS
Turn-ON Rise Time
tR
18
nS
Turn-OFF Delay Time
tD(OFF)
22
nS
Turn-OFF Fall-Time
tF
22
nS



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