UT6401

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-151.B

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

Gate-Source Voltage

±12

V

Continuous Drain Current (Note 3)

-5

Pulsed Drain Current (Note 2)

-30

A

Power Dissipation

2

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient (Note 3)

74

110

/W

℃

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNITS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

V

Drain-Source Leakage Current

-1

uA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-0.7

-1

-1.3

V

On State Drain Current

-25

A

42

49

mΩ

53

64

mΩ

Static Drain-Source On-Resistance (Note 2)

81

119

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

943

pF

Output Capacitance

108

pF

Reverse Transfer Capacitance

73

pF

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note 2)

6

ns

Turn-ON Rise Time

3

ns

Turn-OFF Delay Time

40

ns

Turn-OFF Fall Time

11

ns

Total Gate Charge (Note 2)

9.5

nC

Gate-Source Charge

2.1

nC

Gate-Drain Charge

2.9

nC

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

-0.75

-1

V

Maximum Continuous Drain-Source Diode

Forward Current

-3

A

2. Pulse width ≤300us, duty cycle ≤0.5%.

3. Surface mounted on 1 in