UT5504

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-417.C

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-40

V

Gate-Source Voltage

±20

V

Continuous Drain Current

-8

A

-6

Pulsed Drain Current

-32

A

Power Dissipation

41

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

75

°C/W

Junction to Case

3

°C/W

Notes: 1. Pulse width limited by maximum junction temperature.

2. Duty cycle ≤ 1%

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-40

V

Drain-Source Leakage Current

1

µA

10

Gate- Source Leakage Current

±250 nA

On-State Drain Current (Note 1)

-32

A

ON CHARACTERISTICS

Gate Threshold Voltage

-1

-1.5 -2.5

V

Static Drain-Source On-State

Resistance (Note 1)

65

94

mΩ

38

55

Forward Transconductance (Note 1)

11

S

DYNAMIC PARAMETERS

Input Capacitance

690

pF

Output Capacitance

310

pF

Reverse Transfer Capacitance

75

pF

SWITCHING PARAMETERS

(Note 2)

Total Gate Charge

14

nC

Gate to Source Charge

2.2

nC

Gate to Drain Charge

1.9

nC

Turn-ON Delay Time

6.7 13.4

ns

Rise Time

9.7 19.4

ns

Turn-OFF Delay Time

19.8 35.6

ns

Fall-Time

12.3 22.2

ns