UT6898-S08-R datasheet(1/5 Pages) UTC

部件名	UT6898-S08-R

功能描述	N-CHANNEL ENHANCEMENT

PDF	5 Pages

Scroll/Zoom	100%

制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

标志

1 / 5 page

UNISONIC TECHNOLOGIES CO., LTD

UT6898

Power MOSFET

www.unisonic.com.tw

1 of 5

QW-R502-239.A

N-CHANNEL ENHANCEMENT

DESCRIPTION

The UT6898 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in

PWM applications.

FEATURES

* RDS(ON)<18 mΩ@VGS=2.5V

* RDS(ON)<14 mΩ@VGS=4.5V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

(7) (8)

D1

(4)

G2

(2)

G1

S1

(1)

S2

(3)

(5) (6)

D2

Lead-free:

UT6898L

Halogen-free: UT6898G

ORDERING INFORMATION

Ordering Number

Normal

Lead Free

Halogen Free

Package

Packing

UT6898-S08-R

UT6898L-S08-R

UT6898G-S08-R

SOP-8

Tape Reel

UT6898-S08-T

UT6898L-S08-T

UT6898G-S08-T

SOP-8

Tube

类似零件编号 - UT6898-S08-R

制造商	部件名	数据表	功能描述
Unisonic Technologies	UT6898G-S08-R	214Kb / 5P	N-CHANNEL ENHANCEMENT
VBsemi Electronics Co.,...	UT6898G-S08-R	997Kb / 9P	Dual N-Channel 20-V (D-S) MOSFET
SHENZHEN DOINGTER SEMIC...	UT6898G-S08-R	1Mb / 4P	Dual N-Channel MOSFET uses advanced trench technology
Unisonic Technologies	UT6898	214Kb / 5P	N-CHANNEL ENHANCEMENT

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