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UT6898L-S08-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 UT6898L-S08-R
功能描述  N-CHANNEL ENHANCEMENT
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT6898L-S08-R 数据表(HTML) 3 Page - Unisonic Technologies

  UT6898L-S08-R Datasheet HTML 1Page - Unisonic Technologies UT6898L-S08-R Datasheet HTML 2Page - Unisonic Technologies UT6898L-S08-R Datasheet HTML 3Page - Unisonic Technologies UT6898L-S08-R Datasheet HTML 4Page - Unisonic Technologies UT6898L-S08-R Datasheet HTML 5Page - Unisonic Technologies  
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UT6898
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
www.unisonic.com.tw
QW-R502-239.A
SOLUTE MAXIMUM RATINGS (TA =25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current
ID
9.4
A
Pulsed Drain Current
IDM
38
A
Maximum Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Case
θJC
40
℃
/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
20
V
Drain-Source Leakage Current
IDSS
VGS=0V, VDS=16V
1
µA
Gate-Source Leakage Current
IGSS
VGS=±12V, VDS=0V,
±100
nA
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
0.5
1
1.5
V
On State Drain Current
ID(ON)
VGS=4.5 V, VDS=5V,
19
A
VGS=4.5V, ID=9.4A
10
14
Drain-Source On-State Resistance
RDS(ON)
VGS=2.5V, ID=8.3A
13
18
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
1821
pF
Output Capacitance
COSS
440
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=10V, f=1MHz
208
pF
SWITCHING PARAMETERS
(Note 1)
Turn-ON Delay Time
tD(ON)
10
20
ns
Turn-ON Rise Time
tR
15
27
ns
Turn-OFF Delay Time
tD(OFF)
34
55
ns
Turn-OFF Fall-Time
tF
VGS=4.5V,VDS=10V,ID=1A
RGEN=6Ω
16
29
ns
Total Gate Charge
QG
16
23
nC
Gate Source Charge
QGS
3
nC
Gate Drain Charge
QGD
VGS=4.5V, VDS=10V,
ID=9.4A
4
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS=1.3A (Note 1)
1.3
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
0.7
1.2
A
Notes: 1. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
2. The diode connected between the gate and source serves only as protection against ESD. No gate
overvoltage rating is implied



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