UT9435

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-155.C

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

-4.2

A

Pulsed Drain Current (Note 1, 2)

-20

A

SOT-89

1.25

SOP-8

2.5

W

TO-252

12.5

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

SOT-89

100

TO-252

110

Junction to Ambient (Note 3)

SOP-8

50

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

V

Drain-Source Leakage Current

-1

uA

Gate-Source Leakage Current

±100

nA

-0.1

V/℃

ON CHARACTERISTICS

Gate Threshold Voltage

-1

-3

V

50

mΩ

Static Drain-Source On-Resistance (Note 2)

90

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

520

830

pF

Output Capacitance

180

pF

Reverse Transfer Capacitance

130

pF

SWITCHING CHARACTERISTICS

Total Gate Charge (Note 2)

10

16

nC

Gate-Source Charge

2

nC

Gate-Drain Charge

6

nC

Turn-ON Delay Time (Note 2)

10

48

ns

Turn-ON Rise Time

7

40

ns

Turn-OFF Delay Time

26

292

ns

Turn-OFF Fall Time

14

112

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

-1.3

V

Reverse Recovery Time

30

ns

Reverse Recovery Charge

dI/dt=-100A/μs

24

nC

2. Pulse width ≤300µs , duty cycle ≤2%.

3. Surface mounted on 1 in