MCM6323A

2

MOTOROLA FAST SRAM

E

G

W

LB

UB

Mode

VDD Current

DQa’s

DQb’s

H

X

X

X

X

Not Selected

ISB1, ISB2

High–Z

High–Z

L

H

H

X

X

Output Disabled

IDDA

High–Z

High–Z

L

X

X

H

H

Output Disabled

IDDA

High–Z

High–Z

L

L

H

L

H

Low Byte Read

IDDA

Dout

High–Z

L

L

H

H

L

High Byte Read

IDDA

High–Z

Dout

L

L

H

L

L

Word Read

IDDA

Dout

Dout

L

X

L

L

H

Low Byte Write

IDDA

Din

High–Z

L

X

L

H

L

High Byte Write

IDDA

High–Z

Din

L

X

L

L

L

Word Write

IDDA

Din

Din

Rating

Symbol

Value

Unit

Supply Voltage

VDD

– 0.5 to + 4.6

V

Voltage on Any Pin

Vin

– 0.5 to VDD + 0.5

V

Output Current per Pin

Iout

± 20

mA

Package Power Dissipation

PD

.75

W

Temperature Under Bias

Commerial

Industrial

Tbias

– 10 to + 85

– 45 to + 90

°C

Operating Temperature

Commerial

Industrial

TA

0 to + 70

– 40 to + 85

°C

Storage Temperature

Tstg

– 55 to + 150

°C

NOTES:

1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are

exceeded. Functional operation should be restricted to RECOMMENDED OPER-

ATING CONDITIONS. Exposure to higher than recommended voltages for extended

periods of time could affect device reliability.

2. All voltages are referenced to VSS.

3. Power dissipation capability will be dependent upon package characteristics and use

environment.

This device contains circuitry to protect the

inputs against damage due to high static volt-

ages or electric fields; however, it is advised

that normal precautions be taken to avoid appli-

cation of any voltage higher than maximum

rated voltages to these high–impedance cir-

cuits.

This CMOS memory circuit has been de-

signed to meet the dc and ac specifications

shown in the tables, after thermal equilibrium

has been established. The circuit is in a test

socket or mounted on a printed circuit board

and transverse air flow of at least 500 linear feet

per minute is maintained.