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UTD36N03-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UTD36N03-TN3-R
功能描述  N-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UTD36N03-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

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UTD36N03
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-179.A
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
43.4
A
Pulsed Drain Current (Note 1)
IDM
173.6
A
Power Dissipation
PD
57.6
W
Junction Temperature
TJ
+175
℃
Storage Temperature
TSTG
-55 ~ +175
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
75
℃
/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0V, ID =250 µA
30
V
Drain-Source Leakage Current
IDSS
VDS =24V, VGS =0V
0.05
1
µA
Gate-Source Leakage Current
IGSS
VGS = ±20V, VGS =0V
10
100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH)
VDS=VGS, ID=250 µA
1
1.5
2
V
VGS =4.5V, ID =12A
18
22
Drain-Source On-State Resistance
RDS(ON)
VGS=10 V, ID =25 A
14
17
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
690
Output Capacitance
COSS
160
Reverse Transfer Capacitance
CRSS
VDS =25 V, VGS =0V, f=1.0MHz
110
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
6
Turn-ON Rise Time
tR
10
Turn-OFF Delay Time
tD(OFF)
33
Turn-OFF Fall-Time
tF
VDS =15 V, VGS =10V,
RG =10Ω, RL =0.6 Ω
19
ns
Total Gate Charge
QG
18.5
Gate-Source Charge
QGS
4.2
Gate-Drain Charge
QGD
VDS =15V,VGS =10V,ID =36 A
2.9
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=25A, VGS=0V
0.97
1.2
V
Maximum Continuous Drain-Source
Diode Forward Current
IS
43.4
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
173.6
A
Reverse Recovery Time
tRR
15
18
ns
Reverse Recovery Charge
QRR
VR=15V,IF=IS, dIF/dt=100A/µs
2
3
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.



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