UTD413G-TN3-R datasheet(1/4 Pages) UTC

部件名	UTD413G-TN3-R

功能描述	P-CHANNEL ENHANCEMENT MODE

PDF	4 Pages

Scroll/Zoom	100%

制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

标志

1 / 4 page

UNISONIC TECHNOLOGIES CO., LTD

UTD413

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-246.C

P-CHANNEL

ENHANCEMENT MODE

DESCRIPTION

The UTD413 can provide excellent RDS(ON) and low gate charge

by using UTC’s advanced trench technology. The UTD413 is well

suited for high current load applications with the excellent thermal

resistance of the TO-252 package. Standard Product UTD413 is

Pb-free.

FEATURES

* RDS(ON) < 45mΩ @VGS = -10V

* RDS(ON) < 69mΩ @VGS = -4.5V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

1.Gate

3.Source

2.Drain

ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

Lead Free

Halogen Free

1

2

3

UTD413L-TN3-R

UTD413G-TN3-R

TO-252

G

D

S

Tape Reel

UTD413L-TN3-T

UTD413G-TN3-T

TO-252

G

D

S

Tube

类似零件编号 - UTD413G-TN3-R

制造商	部件名	数据表	功能描述
Unisonic Technologies	UTD413G-TN3-R	209Kb / 4P	P-CHANNEL ENHANCEMENT MOSFET

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