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DTA143TL-AL3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 DTA143TL-AL3-R
功能描述  DIGITAL TRANSISTORS
PDF  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

DTA143TL-AL3-R 数据表(HTML) 2 Page - Unisonic Technologies

  DTA143TL-AL3-R Datasheet HTML 1Page - Unisonic Technologies DTA143TL-AL3-R Datasheet HTML 2Page - Unisonic Technologies DTA143TL-AL3-R Datasheet HTML 3Page - Unisonic Technologies  
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DTA143T
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-058,E
ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-100
mA
Collector Power Dissipation
SOT-23/SOT-323
PC
200
mW
SOT-523
150
mW
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-40~+150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-base breakdown voltage
BVCBO IC=-50μA
-50
V
Collector-emitter breakdown voltage
BVCEO IC=-1mA
-50
V
Emitter-base breakdown voltage
BVEBO IE=-50μA
-5
V
Collector cutoff current
ICBO
VCB=-50V
-0.5
μA
Emitter cutoff current
IEBO
VEB=-4V
-0.5
μA
Collector-emitter saturation voltage
VCE(SAT) IC=-5mA, IB= -0.25mA
-0.3
V
DC Current Gain
hFE
VCE=-5V, IC= -1mA
100
250
600
Input resistance
R1
3.29
4.7
6.11
kΩ
Transition frequency
fT
VCE=-10V, IE=5mA, f=100MHz (Note)
250
MHz
Note: Transition frequency of the device



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