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UTD420L-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UTD420L-TN3-R
功能描述  N-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UTD420L-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UTD420L-TN3-R Datasheet HTML 1Page - Unisonic Technologies UTD420L-TN3-R Datasheet HTML 2Page - Unisonic Technologies UTD420L-TN3-R Datasheet HTML 3Page - Unisonic Technologies UTD420L-TN3-R Datasheet HTML 4Page - Unisonic Technologies UTD420L-TN3-R Datasheet HTML 5Page - Unisonic Technologies  
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UTD420
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-188.A
ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
10
A
Pulsed Drain Current
IDM
30
A
Avalanche Current
IAR
15
A
Repetitive Avalanche Energy (L=0.1mH)
EAR
36
mJ
Power Dissipation (TC=25°C)
PD
60
W
Junction Temperature
TJ
+175
℃
Strong Temperature
TSTG
-55 ~ +175
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
40
50
℃
/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250µA
30
V
Drain-Source Leakage Current
IDSS
VDS =24V, VGS =0 V
1
µA
Gate-Body Leakage Current
IGSS
VDS =0 V, VGS = ±20V
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
1
1.8
3
V
On State Drain Current
ID(ON)
VDS =5V, VGS =4.5V
40
A
VGS =10V, ID =10A
21
28
mΩ
Static Drain-Source On-Resistance
RDS(ON)
VGS =4.5V, ID =7A
32.5
42
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
710
850
pF
Output Capacitance
COSS
120
pF
Reverse Transfer Capacitance
CRSS
VDS =15 V, VGS =0V, f=1MHz
72
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
14.4
18
nC
Gate Source Charge
QGS
2.6
nC
Gate Drain Charge
QGD
VDS =15V, VGS =10V, ID =10A
2.7
nC
Turn-ON Delay Time
tD(ON)
5.6
ns
Turn-ON Rise Time
tR
2.4
ns
Turn-OFF Delay Time
tD(OFF)
15.6
ns
Turn-OFF Fall-Time
tF
VGS=10V,VDS=15V,RL=1.5Ω,
RGEN =3Ω
2.2
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=1A,VGS=0V
0.75
1
V
Maximum Continuous Drain-Source
Diode Forward Current
IS
10
A
Body Diode Reverse Recovery Time
tRR
IF=10 A, dI/dt=100A/µs
13.4
21
ns
Body Diode Reverse Recovery
Charge
QRR
IF=10 A, dI/dt=100A/µs
4.4
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle 0.5% max.



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