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UTD436-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UTD436-TN3-R
功能描述  N-CHANNEL ENHANCEMENT MODE
PDF  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UTD436-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UTD436-TN3-R Datasheet HTML 1Page - Unisonic Technologies UTD436-TN3-R Datasheet HTML 2Page - Unisonic Technologies UTD436-TN3-R Datasheet HTML 3Page - Unisonic Technologies  
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UTD436
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-258.a
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
TC=25°C
ID
60
A
Pulsed Drain Current
IDM
130
A
Avalanche Current
IAR
30
A
Repetitive Avalanche Energy L=0.1mH
EAR
113
mJ
Power Dissipation
TC=25°C
PD
50
W
Junction Temperature
TJ
+175
℃
Storage Temperature
TSTG
-55 ~ +175
℃
Note:1.
2.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
39
50
/W
℃
Junction-to-Case
θJC
2
3
/W
℃
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
30
V
Drain-Source Leakage Current
IDSS
VDS=24V, VGS=0V
1
µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
1.8
3
V
On State Drain Current
ID(ON)
VDS=5V, VGS=10V
85
A
VGS=10V, ID=20A
5.4
7.5
Static Drain-Source On-Resistance
RDS(ON)
VGS=4.5V, ID=20A
9.8
13
mΩ
Forward Transconductance
gFS
VDS=5V, ID=20A
88
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
1520 1825
pF
Output Capacitance
COSS
306
pF
Reverse Transfer Capacitance
CRSS
VDS=15V, VGS=0V, f=100kHz
214
pF
SWITCHING PARAMETERS
10V
31.9
39
Total Gate Charge
4.5V
QG
16.2
20
nC
Gate Source Charge
QGS
5
nC
Gate Drain Charge
QGD
VDS=15V, VGS=4.5V, ID=20A
9.6
nC
Turn-ON Delay Time
tD(ON)
7
ns
Turn-ON Rise Time
tR
11.6
ns
Turn-OFF Delay Time
tD(OFF)
24.2
ns
Turn-OFF Fall-Time
tF
VGS=10V, VDS=15V,
RL=0.75Ω, RG=3Ω
7.7
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=1A, VGS=0V
0.71
1
V
Maximum Body-Diode Continuous Current
IS
85
A
Body Diode Reverse Recovery Time
tRR
23.8
30
ns
Body Diode Reverse Recovery Charge
QRR
IF=20A, dI/dt=100A/μs
15.7
nC



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