DTA144T

PNP SILICON TRANSISITOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-065.C

℃

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

-50

V

Collector-Emitter Voltage

-50

V

Emitter-Base Voltage

-5

V

Collector Current

-100

mA

Collector Power Dissipation

200

mW

Junction Temperature

150

°С

Storage Temperature

-55~+150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

-50

V

Collector-Emitter Breakdown Voltage

-50

V

Emitter-Base Breakdown Voltage

-5

V

Collector Cutoff Current

-0.5

μA

Emitter Cutoff Current

-0.5

μA

Collector-Emitter Saturation Voltage

-0.3

V

DC Current Transfer Ratio

100

250

600

Transition Frequency (Note)

250

MHz

Input Resistance

R1

32.9

47

61.1

kΩ

Note: Transition frequency of the device