UTD3055G-TN3-R datasheet(3/4 Pages) UTC

3 / 4 page

UTD3055

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-460.a

ELECTRICAL CHARACTERISTICS (Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

SWITCHING PARAMETERS

(Note 2)

12.2

3.2

5.2

Gate Charge

VGS=10V, VDS=48V, ID=12A

5.5

Turn-ON Delay Time

tD(ON)

7.0

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall-Time

VDD=30V, VGS=10V, ID=12A,

RG=9.1Ω

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

IS=12A, VGS=0V

1.0

1.6

Drain-Source Diode Forward Voltage

(Note 1)

VSD

IS=12A, VGS=0V, TJ=150°C

0.91

tRR

Reverse Recovery Time

Reverse Recovery Charge

QRR

IS=12A, VGS=0V, dIs/dt=100A/µs

0.128

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25’’

from package to center of die)

4.5

Internal Source Inductance

(Measured from the source lead 0.25,

from package to source bond pad)

7.5

Note: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.

2. Switching characteristics are independent of operating junction temperature.

UTD3055G-TN3-R 数据表(PDF) 3 Page - Unisonic Technologies

UTD3055G-TN3-R 数据表(HTML) 3 Page - Unisonic Technologies

Html Pages

1 2 3 4

数据表下载