DTC113T

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R223-001.B

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

50

V

Emitter to Base Voltage

6

V

Collector to Emitter voltage

50

V

Collector Current

100

mA

Peak Collector Current

200

mA

Collector Power Dissipation

SOT-23/SOT-323

200

mW

SOT-523

150

Junction Temperature

+150

℃

Storage Temperature

-55~+150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

℃

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Emitter Breakdown Voltage

50

V

Collector Cut-off Current

0.1

μA

DC Current Gain

100

Collector-Emitter Saturation Voltage

0.3

V

Input Resistance

0.7

1.0

1.3

kΩ

Current Gain Bandwidth Product

200

MHz