DTC114T

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-054,D

℃

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

50

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

5

V

Collector Current

100

mA

Power Dissipation

SOT-23/SOT-323

200

mW

SOT-523

150

mW

Junction Temperature

150

℃

Storage Temperature

-55 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

50

V

Collector-Emitter Breakdown Voltage

50

V

Emitter-Base Breakdown Voltage

5

V

Collector-Emitter Saturation Voltage

0.3

V

Collector Cut-off Current

0.5

μA

Emitter Cut-off Current

0.5

μA

DC Current Gain

100

300

600

Input Resistance

7

10

13

kΩ

Current Gain Bandwidth Product

250

MHz