DTC124E

NPN EPITAXIAL SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

3 of 3

www.unisonic.com.tw

QW-R206-045,D

■

TYPICAL CHARACTERICS

100

100

50

20

10

5

2

1

500m

200m

100m

Vo=-0.2V

1k

500

200

100

50

10

5

2

1

20

Vo=5V

-40

25

1

500m

200m

100m

50m

20m

10m

5m

2m

1m

-40

25

0.5

1.0

1.5

2.0

2.5

3.0

Vcc=5V

25

-40

-25

0

Fig.1 Input voltage vs.output current (ON

characterristics)

Output Current :Io(A)

Fig.3 DC current gain vs.output current

Output Current :Io(A)

Fig.2 Output current vs Input

voltage .(OFF characterristics)

Fig.4Output voltage vs.output current

Output Current :Io(A)

200μ

500μ

2m

5m

10m 20m

50m 100m

1m

100μ

200μ 500μ

2m

5m

10m 20m

50m 100m

1m

100μ

200μ 500μ

2m

5m

10m 20m

50m 100m

1m

100μ

10m

5m

2m

500μ

200μ

50μ

20μ

10μ

2μ

5μ

100μ

1m

1μ

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exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or

other param eters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, dev ices or system s where

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presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate

and reliable and m ay be changed without notice.