UTM3023L-TN3-R datasheet(2/5 Pages) UTC

2 / 5 page

UTM3023

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-178.A

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Maximum Continuous Drain Current

Maximum Pulsed Drain Current

IDM

Maximum Power Dissipation

62.5

Maximum Junction Temperature

150

Storage Temperature Range

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0 V, IDS =250µA

Drain-Source Leakage Current

IDSS

VDS =24 V, VGS =0 V

µA

Gate-Source Leakage Current

IGSS

VDS =0 V, VGS = ±20V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS =VGS, IDS =250 µA

1.5

VGS =10 V, IDS =20 A

Drain-Source On-State Resistance(Note 2)

RDS(ON)

VGS =5 V, IDS =10 A

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

1200

Output Capacitance

COSS

220

Reverse Transfer Capacitance

CRSS

VDS =15 V, VGS =0V, f=1.0MHz

100

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note 2)

tD(ON)

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall Time

IDS=2 A,VDD=15 V,RG=6 Ω,

VGEN =10V

Total Gate Charge (Note 2)

Gate-Source Charge

QGS

5.8

Gate-Drain Charge

QGD

VDS =15V, VGS =5V, IDS =10A

3.8

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

VSD

ISD=15A,VGS=0V

0.7

1.3

Note: 1. Pulse width limited by TJ(MAX)

2. Pulse width ≤300us, duty cycle ≤2%

3. Surface Mounted on FR4 Board, t ≤ 10 sec.

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