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UTM4052G-S08-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名 UTM4052G-S08-R
功能描述  DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)
PDF  9 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UTM4052G-S08-R 数据表(HTML) 4 Page - Unisonic Technologies

  UTM4052G-S08-R Datasheet HTML 1Page - Unisonic Technologies UTM4052G-S08-R Datasheet HTML 2Page - Unisonic Technologies UTM4052G-S08-R Datasheet HTML 3Page - Unisonic Technologies UTM4052G-S08-R Datasheet HTML 4Page - Unisonic Technologies UTM4052G-S08-R Datasheet HTML 5Page - Unisonic Technologies UTM4052G-S08-R Datasheet HTML 6Page - Unisonic Technologies UTM4052G-S08-R Datasheet HTML 7Page - Unisonic Technologies UTM4052G-S08-R Datasheet HTML 8Page - Unisonic Technologies UTM4052G-S08-R Datasheet HTML 9Page - Unisonic Technologies  
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UTM4052
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 9
www.unisonic.com.tw
QW-R502-137.E
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
40
V
Drain-Source Leakage Current
IDSS
VDS=32V, VGS=0V
1
uA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250uA
1.3
2
2.5
V
VGS=10V, ID=7.5A
30
38
mΩ
Drain-Source On-State Resistance (Note2)
RDS(ON)
VGS=5V, ID=5A
46
62
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
480
pF
Output Capacitance
COSS
70
pF
Reverse Transfer Capacitance
CRSS
VGS=0V,VDS=20V,f=1.0MHz
50
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
7
14
ns
Turn-ON Rise Time
tR
10
19
ns
Turn-OFF Delay Time
tD(OFF)
17
32
ns
Turn-OFF Fall Time
tF
VDS=20V, VGS=10V, ID=1A,
RG=6Ω, RL=20Ω
3
6
ns
Total Gate Charge (Note2)
QG
17
24
nC
Gate-Source Charge
QGS
2.2
nC
Gate-Drain Charge
QGD
VDS=20V, VGS=10V, ID=7.5A
4
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
TJ=25℃, IS=2A, VGS=0V
0.8
1.1
V
Diode Continuous Forward Current (Note3)
IS
20
A
Reverse Recovery Time
tRR
21
ns
Reverse Recovery Charge
QRR
IDS=7.5A, dI/dt=100A/μs
16
nC
P-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250uA
-40
V
Drain-Source Leakage Current
IDSS
VDS=-32V, VGS=0V
-1
uA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250uA
-1.3
-2
-2.5
V
VGS=-10V, ID=-6A
45
50
mΩ
Drain-Source On-State Resistance (Note2)
RDS(ON)
VGS=-5V, ID=-3.5A
52
73
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
970
pF
Output Capacitance
COSS
100
pF
Reverse Transfer Capacitance
CRSS
VGS=0V,VDS=-20V,f=1.0MHz
70
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
5
10
ns
Turn-ON Rise Time
tR
11
21
ns
Turn-OFF Delay Time
tD(OFF)
37
68
ns
Turn-OFF Fall Time
tF
VDS=-20V, VGS=-10V,
ID=-1A, RG=6Ω, RL=20Ω
12
23
ns
Total Gate Charge (Note2)
QG
17
24
nC
Gate-Source Charge
QGS
2.2
nC
Gate-Drain Charge
QGD
VDS=-20V, VGS=-10V,
ID=-6A
4
nC



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