UTM4953

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-293.B

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

V

Gate-Source Voltage

±25

V

Drain Current

Continuous

-4.9

A

Pulsed

-30

Power Dissipation

2.5

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

50

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

V

Zero Gate Voltage Drain Current

-1

µA

Gate-Body Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1

-1.5

-2

V

Static Drain-Source On-Resistance

53

60

mΩ

80

95

DYNAMIC PARAMETERS

Input Capacitance

1260

pF

Output Capacitance

340

pF

Reverse Transfer Capacitance

220

pF

SWITCHING PARAMETERS

(Note)

Turn-ON Delay Time

10

18

ns

Turn-ON Rise Time

15

20

ns

Turn-OFF Delay Time

22

38

ns

Turn-OFF Fall-Time

15

25

ns

Total Gate Charge

22.3

29

nC

Gate Source Charge

4.65

nC

Gate Drain Charge

2

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

-0.7

-1.3

V

Note: Pulse width≦300µs, Duty cycle≦2%