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UTN3055-TN3-R 数据表(PDF) 3 Page - Unisonic Technologies |
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UTN3055-TN3-R 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() UTN3055 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R502-138.A TYPICAL CHARACTERISTICS 25℃ -55℃ TJ=100℃ VDS≥10V Gate-to-Source Voltage,VGS (V) Transfer Characteristics 10 9 8 7 6 5 4 3 2 1 0 22.2 2.4 4 3.8 3.6 3.4 3.2 3 2.8 2.6 TJ=25℃ VGS=10V 8V 4.5V 3.0V 2.5V 2.0V On-Resistance Variation with Temperature Drain-to-Source Voltage, VGS (V) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 9 10 TJ=25℃ 0 1 2 345 67 8 910 Drain Current,ID (A) 0.03 0.0325 0.035 0.0375 0.04 0.0425 On-Resistance vs. Drain Current and Gate Voltage ID=2.5A Gate-to-Source Voltage,VGS(V) 0 12 3 4 56 78 9 10 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.2 On-Resistance vs. Gate-to-Source Voltage |
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