UTT10N10

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-714.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

100

V

Gate-Source Voltage

±25

V

Drain Current

Continuous

10

A

Pulsed

40

A

Avalanche Current

12.8

A

Avalanche Energy

Single Pulsed

95

mJ

Repetitive

6.5

mJ

Peak Diode Recovery dv/dt

dv/dt

6

V/ns

Power Dissipation

54

W

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

2.31

°C/W

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

100

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

Forward

+100

nA

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

142 180

mΩ

DYNAMIC PARAMETERS

Input Capacitance

345 1300

pF

Output Capacitance

100

pF

Reverse Transfer Capacitance

20

pF

SWITCHING PARAMETERS

Total Gate Charge

12

110

nC

Gate to Source Charge

2.5

nC

Gate to Drain Charge

5.1

nC

Turn-ON Delay Time

5

ns

Rise Time

55

120

ns

Turn-OFF Delay Time

20

ns

Fall-Time

25

60

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

10

A

Maximum Body-Diode Pulsed Current

40

A

Drain-Source Diode Forward Voltage

1.5

V