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UTR4502G-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UTR4502G-AE3-R
功能描述  -1.95 Amps, -30 Volts P-CHANNEL POWER MOSFET
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UTR4502G-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UTR4502G-AE3-R Datasheet HTML 1Page - Unisonic Technologies UTR4502G-AE3-R Datasheet HTML 2Page - Unisonic Technologies UTR4502G-AE3-R Datasheet HTML 3Page - Unisonic Technologies UTR4502G-AE3-R Datasheet HTML 4Page - Unisonic Technologies  
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UTR4502
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-234.C
ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 3)
ID
-1.13
A
Pulsed Drain Current (Note 1, 2)
IDM
-6.8
A
Total Power Dissipation
PD
0.4
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
300
℃
/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0 V, ID=-250µA
-30
V
Drain-Source Leakage Current
IDSS
VDS=-30V, VGS=0V
-1
µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-1.0
-3.0
V
VGS=-10V, ID=-1.95A
155
200
Static Drain-Source On-Resistance (Note 2)
RDS(ON)
VGS=-4.5V, ID=-1.5A
240
350
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
200
pF
Output Capacitance
COSS
80
pF
Reverse Transfer Capacitance
CRSS
VDS=-15V, VGS=0V, f=1MHz
50
pF
SWITCHING PARAMETERS
(Note 4)
Turn-ON Delay Time
tD(ON)
5.2
10
ns
Turn-ON Rise Time
tR
12
24
ns
Turn-OFF Delay Time
tD(OFF)
19
96
ns
Turn-OFF Fall-Time
tF
VGS=-10V, VDD=-15V,
ID=-1.95A, RGEN=6Ω
17.5
48
ns
Total Gate Charge
QG(TOT)
6
10
nC
Threshold Gate Charge
QG(TH)
0.3
nC
Gate Source Charge
QGS
1
nC
Gate Drain Charge
QGD
VDS=-15V, VGS=-10V,
ID =-1.95A
1.7
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
(Note 3)
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=-1.25A, VGS=0V
-0.8
-1.2
V
Reverse Recovery Time
tRR
VGS=0V, dISD /dt=100A/s
IS=-1.25A
23
ns
Note: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.



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