UTT15P06

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-733.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-60

V

Gate-Source Voltage

±25

V

Drain Current

Continuous

-15

A

Pulsed

-45

A

Power Dissipation (Note 2)

31.3

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

Steady state

62.5

°C/W

Junction to Case

4

°C/W

Notes: 1. Duty cycle≤1 %.

2. See SOA curve for voltage derating.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-60

V

Drain-Source Leakage Current

-1

µA

Gate-Source Leakage Current

Forward

+100

nA

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1

-3

V

Static Drain-Source On-State Resistance

90

mΩ

DYNAMIC PARAMETERS

(Note 2)

Input Capacitance

(Note 2)

1100 2660

pF

Output Capacitance

115

pF

Reverse Transfer Capacitance

90

pF

SWITCHING PARAMETERS

Total Gate Charge

14

27

nC

Gate to Source Charge

3

nC

Gate to Drain Charge

8

nC

Turn-ON Delay Time

(Note 3)

16

ns

Rise Time

30

ns

Turn-OFF Delay Time

50

ns

Fall-Time

20

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

-15

A

Maximum Body-Diode Pulsed Current

-45

A

Drain-Source Diode Forward Voltage

-1.0

-1.5

V

Notes: 1. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

2. Guaranteed by design, not subject to production testing.

3. Independent of operating temperature.