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UTT18P06L-TN3-R 数据表(PDF) 3 Page - Unisonic Technologies |
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UTT18P06L-TN3-R 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 3 page ![]() UTT18P06 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 3 www.unisonic.com.tw QW-R502-713.a ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING PARAMETERS Total Gate Charge QG VGS=-10V, VDS=-30V, ID=-18.3A (Note 3) 26 40 nC Gate to Source Charge QGS 4.5 nC Gate to Drain Charge QGD 7.0 nC Turn-ON Delay Time tD(ON) VDD=-30V, ID=-1A, RG=2.5Ω (Note 3) 40 ns Rise Time tR 58 ns Turn-OFF Delay Time tD(OFF) 150 ns Fall-Time tF 60 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (TC=25°C) (Note 2) Maximum Body-Diode Continuous Current IS -18.3 A Maximum Body-Diode Pulsed Current ISM -73.2 A Drain-Source Diode Forward Voltage VSD IF=-18.3A, VGS=0V (Note 1) -1.0 -1.5 V Body Diode Reverse Recovery Time trr IF=-18.3A, dIF/dt=100A/µs 14 61 ns Notes: 1. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. 2. Guaranteed by design, not subject to production testing. 3. Independent of operating temperature. UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. |
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