UTT18P10

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-619.a

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-100

V

Breakdown Voltage Temperature

Coefficient

-0.08

7

V/°C

-100

µA

Drain-Source Leakage Current

-500

µA

Forward

+100 nA

Gate- Source Leakage Current

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-2.0

-4.0

V

Static Drain-Source On-State Resistance

0.20

Ω

Forward Transconductance

6.2

S

DYNAMIC PARAMETERS

Input Capacitance

1400

pF

Output Capacitance

590

pF

Reverse Transfer Capacitance

140

pF

SWITCHING PARAMETERS

Total Gate Charge

61

nC

Gate to Source Charge

14

nC

Gate to Drain ("Miller") Charge

See Fig 3 (Note 2)

29

nC

Turn-ON Delay Time

16

ns

Rise Time

73

ns

Turn-OFF Delay Time

34

ns

Fall-Time

57

ns

Internal Drain Inductance

4.5

nH

Internal Source Inductance

Between lead, 6

mm (0.25.) from

package and

center of die

contact

7.5

nH

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

-19

A

Maximum Body-Diode Pulsed Current

(Note 1)

MOSFET

symbol showing

the integral

reverse p-n

junction diode.

-72

A

Drain-Source Diode Forward Voltage

(Note 2)

-5.0

V

Body Diode Reverse Recovery Time

130 260

ns

Body Diode Reverse Recovery Charge

(Note 2)

0.35 0.70

µC

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by

Notes

:

1. Repetitive rating; pulse width limited by max. junction temperature.

2. Pulse width≤300µs; duty cycle≤2%.