UTT25N08

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-749.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

80

V

Gate-Source Voltage

±25

V

Drain Current

Continuous

25

A

Pulsed

100

A

Power Dissipation

50

W

Junction Temperature

+150

°C

Storage Temperature

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

100

°C/W

Junction to Case

2.5

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

80

V

Drain-Source Leakage Current

1

µA

Gate- Source Leakage Current

Forward

+100

nA

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

120

mΩ

DYNAMIC PARAMETERS

Input Capacitance

600 780

pF

Output Capacitance

165 215

pF

Reverse Transfer Capacitance

32

40

pF

SWITCHING PARAMETERS

Total Gate Charge

(Note 1, 2)

19

25

nC

Gate to Source Charge

3.9

nC

Gate to Drain Charge

9.0

nC

Turn-ON Delay Time

7.5

25

ns

Rise Time

150 310

ns

Turn-OFF Delay Time

20

50

ns

Fall-Time

65

140

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

25

A

Maximum Body-Diode Pulsed Current

100

A

Drain-Source Diode Forward Voltage

1.5

V

Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating temperature