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UTT25P10L-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UTT25P10L-TN3-R
功能描述  25A, 100V P-CHANNEL POWER MOSFET
PDF  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UTT25P10L-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

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UTT25P10
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-597.b
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (Note 2)
VDSS
-100
V
Drain-Gate Voltage (RGS=20kΩ) (Note 2)
VDGR
-100
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
-25
A
Pulsed (Note 3)
IDM
-60
A
Linear Derating Factor
1.2
W/°C
Power Dissipation
TO-220
PD
150
W
TO-252
50
Junction Temperature
TJ
-55~+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. TJ=25°C ~ 150°C
3. Repetitive rating: pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Case
TO-220
θJC
0.83
°C/W
TO-252
2.5
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
-100
V
Drain-Source Leakage Current
IDSS
VDS=Rated BVDSS, VGS=0V
-1
µA
VDS=0.8xRated BVDSS,
VGS=0V , TC=125°C
-25
Gate- Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100
nA
Reverse
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
-2
-4
V
Drain to Source On Voltage (Note 1)
VDS(ON)
ID=-25A, VGS=-10V
-3.75
V
Static Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS=-10V, ID=2.5A
0.150
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=-25V,
f=1MHz
3000
pF
Output Capacitance
COSS
1500
pF
Reverse Transfer Capacitance
CRSS
600
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
ID≈12.5A, VDS=-50V,
RGS=50Ω,VGS=-10V,
RL=4.0Ω
35
50
ns
Rise Time
tR
165
250
ns
Turn-OFF Delay Time
tD(OFF)
270
400
ns
Fall-Time
tF
165
250
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 1)
VSD
ISD=-12.5A,
-1.4
V
Note:
1. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.



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