UTT30N05

Preliminary

Power MOSFE

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-660.a

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

50

V

Gate-Source Voltage

±20

V

Continuous

30

A

Drain Current

Pulsed

120

A

Single Pulsed

300

mJ

Avalanche Energy

Repetitive

8

mJ

Power Dissipation

44

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

50

°C/W

Junction to Case

2.85

°C/W

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

50

V

Drain-Source Leakage Current

1

µA

Forward

+100

nA

Gate- Source Leakage Current

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

2

4

V

Static Drain-Source On-State Resistance

32

40

mΩ

DYNAMIC PARAMETERS

Input Capacitance

800

pF

Output Capacitance

300

pF

Reverse Transfer Capacitance

f=1.0MHz

80

pF

SWITCHING PARAMETERS

Total Gate Charge

20

30

nC

Gate to Source Charge

6

nC

Gate to Drain Charge

9

nC

Turn-ON Delay Time

12

ns

Rise Time

79

ns

Turn-OFF Delay Time

50

ns

Fall-Time

52

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

30

A

Maximum Body-Diode Pulsed Current

120

A

Drain-Source Diode Forward Voltage

1.4

V