UTT30N06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-637.A

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

30

A

Continuous

21.3

A

Drain Current

Pulsed (Note 1)

120

A

Single Pulsed (Note 2)

300

mJ

Avalanche Energy

Repetitive (Note 1)

8

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

7.5

V/ns

TO-220

89

Power Dissipation

TO-252

44

W

Junction Temperature

+150

°C

Operation Temperature

-55~+150

°C

Storage Temperature

-55~+150

°C

Notes:

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

1. Repeativity rating: pulse width limited by junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

62

Junction to Ambient

TO-252

50

°C/W

TO-220

1.4

Junction to Case

TO-252

2.85

°C/W