UTT30N08

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-732.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

80

V

Gate-Source Voltage

±20

V

Drain Current (Note 5)

Continuous

30

A

21.3

A

Pulsed (Note 2)

120

A

Avalanche Energy

Single Pulsed (Note 3)

300

mJ

Repetitive (Note 2)

8

mJ

28

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating; Pulse width limited by maximum junction temperature.

4. Drain current limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

110

°C/W

Junction to Case

4.53

°C/W

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

80

V

Drain-Source Leakage Current

1

µA

Gate- Source Leakage Current

Forward

+100 nA

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

32

40

mΩ

DYNAMIC PARAMETERS

Input Capacitance

2400

pF

Output Capacitance

390

pF

Reverse Transfer Capacitance

30

pF