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UTT30N10L-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UTT30N10L-TN3-R
功能描述  30A, 100V N-CHANNEL POWER MOSFET
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UTT30N10L-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UTT30N10L-TN3-R Datasheet HTML 1Page - Unisonic Technologies UTT30N10L-TN3-R Datasheet HTML 2Page - Unisonic Technologies UTT30N10L-TN3-R Datasheet HTML 3Page - Unisonic Technologies UTT30N10L-TN3-R Datasheet HTML 4Page - Unisonic Technologies UTT30N10L-TN3-R Datasheet HTML 5Page - Unisonic Technologies  
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UTT30N10
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-661.c
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
(VGS=10V) TC=25°C
ID
30
A
Pulsed
IDM
120
A
Single Pulsed Avalanche Energy (Note 2)
EAS
55
mJ
Power Dissipation
TO-220
PD
79
W
TO-252
44
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Starting TJ = 25°C, L = 0.27mH, IAS = 30A.
3. Pulse Width = 100s
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
TO-220
θJA
62
°C/W
TO-252
110
Junction to Case
TO-220
θJC
1.58
°C/W
TO-252
2.85
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
100
V
Drain-Source Leakage Current
IDSS
VDS=100V, VGS=0V
1
µA
Gate- Source Leakage
Current
Forward
IGSS
VGS=+20V, VDS=0V
+100 nA
Reverse
VGS=-20V, VDS=0V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
3
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=30A
32
43
mΩ
VGS=6V, ID=15A
40
72
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
1250
pF
Output Capacitance
COSS
190
pF
Reverse Transfer Capacitance
CRSS
45
pF
SWITCHING PARAMETERS
Total Gate Charge at 10V
QG
VGS=0~10V,VDD=50V,ID=30A,IG=1.0mA
18.5 28
nC
Gate to Source Charge
QGS
VDD=50V, ID=30A, IG=1.0mA
6.5
nC
Gate to Drain Charge
QGD
4.6
nC
Turn-ON Time
tON
VDD=50V, ID=30A, VGS=10V,
RGS=16Ω
83
ns
Turn-ON Delay Time
tD(ON)
9
ns
Rise Time
tR
46
ns
Turn-OFF Delay Time
tD(OFF)
26
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
ISD=30A
1.25
V
ISD=15A
1.0
V



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