UTT30P04L-TN3-R datasheet(2/3 Pages) UTC

2 / 3 page

UTT30P04

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-613.a

ABSOLUTE MAXIMUM RATINGS (TA=25°C Unless Otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDS

-40

Gate-Source Voltage

VGS

±20

TC=25°C

-21

Continuous Drain Current

TC=70°C

-17

Pulsed Drain Current (Note 2)

IDM

-70

Avalanche Current

IAS

-27

Avalanche Energy (Note 3)

L=0.1mH

EAS

TC=25°C

Power Dissipation

TC=70°C

Junction Temperature

-55~150

°C

Storage Temperature

TSTG

-55~150

°C

Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by maximum junction temperature.

3. VDD=-20V. Starting TJ=25°C.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

°C/W

Junction to Case

θJC

4.1

°C/W

UTT30P04L-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

UTT30P04L-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3

数据表下载