UTT30P04

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 3

www.unisonic.com.tw

QW-R502-613.a

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-40

V

1

Drain-Source Leakage Current

10

µA

Gate- Source Leakage Current

±250 nA

On-State Drain Current (Note 1)

-70

A

ON CHARACTERISTICS

Gate Threshold Voltage

-1

-2.5

-3

V

65

73

35

50

Static Drain-Source On-State

Resistance (Note 1)

30

40

mΩ

Forward Transconductance (Note 1)

20

S

Gate Resistance

4.95

Ω

DYNAMIC PARAMETERS

Input Capacitance

1090

Output Capacitance

175

Reverse Transfer Capacitance

91

pF

SWITCHING PARAMETERS

(Note 2)

17

Total Gate Charge

8.5

Gate to Source Charge

5.5

Gate to Drain Charge

3

nC

Turn-ON Delay Time

6

ns

Rise Time

16

ns

Turn-OFF Delay Time

26

ns

Fall-Time

10

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Continuous Current

-21

A

Drain-Source Diode Forward Voltage

1

-1.2

V

Reverse Recovery Time

15.5

ns

Reverse Recovery Charge

7.9

nC

Note: 1. Pulsde test: Pulse width ≤300µsec, duty cycle ≤2%.

2. Independent of operating temperature.

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.