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UTT4815G-S08-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名 UTT4815G-S08-R
功能描述  8 Amps, -30 Volts P-CHANNEL POWER MOSFET
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UTT4815G-S08-R 数据表(HTML) 4 Page - Unisonic Technologies

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UTT4815
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 5
www.unisonic.com.tw
QW-R502-564.a
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS =0 V, ID =-250µA
-30
V
Drain-Source Leakage Current
IDSS
VDS =-24V, VGS =0 V
-1
µA
Forward
VGS=+25V, VDS=0V
+1
Gate- Source Leakage Current
Reverse
IGSS
VGS=-25V, VDS=0V
-1
µA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS =VGS, ID =-250 µA
-1
-2.8
-3
V
VGS =-20V, ID =-8A
14.1
18
mΩ
VGS =-20V, ID =-8A,
TJ =125°C
19
24
mΩ
VGS =-10V, ID =-8A
16.2
20
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS =-4.5V, ID =-5A
37
mΩ
On State Drain Current
ID(ON)
VGS=-10V, VDS=-5V
-40
A
DYNAMIC PARAMETERS
Input Capacitance
CISS
2330 2900
Output Capacitance
COSS
480
Reverse Transfer Capacitance
CRSS
VDS =-15 V, VGS =0V, f=1MHz
320
pF
Gate Resistance
Rg
VDS =0V, VGS =0V, f=1MHz
6.8
10
Ω
SWITCHING PARAMETERS
Total Gate Charge
QG
41
52
Gate Source Charge
QGS
10
Gate Drain Charge
QGD
VDS =-15V, VGS =-10V, ID=-8A
(Note 1,2)
12
nC
Turn-ON Delay Time
tD(ON)
13
Turn-ON Rise Time
tR
12
Turn-OFF Delay Time
tD(OFF)
51
Turn-OFF Fall-Time
tF
VDS =-15V, VGS =-10V,
RL=1.8Ω, RGEN=3Ω(Note 1,2)
30.5
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=-1A, VGS=0V
-1
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
-2.6
A
Body Diode Reverse Recovery Time
tRR
IF=-8 A, dI/dt=100A/μs
28
35
ns
Body Diode Reverse Recovery Charge
QRR
IF=-8A,dI/dt=100A/μs(Note 1)
20.5
nC
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature



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