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X0202AL-AA3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 X0202AL-AA3-R
功能描述  SENSITIVE SCRS
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

X0202AL-AA3-R 数据表(HTML) 2 Page - Unisonic Technologies

  X0202AL-AA3-R Datasheet HTML 1Page - Unisonic Technologies X0202AL-AA3-R Datasheet HTML 2Page - Unisonic Technologies X0202AL-AA3-R Datasheet HTML 3Page - Unisonic Technologies X0202AL-AA3-R Datasheet HTML 4Page - Unisonic Technologies X0202AL-AA3-R Datasheet HTML 5Page - Unisonic Technologies  
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X0202/A
SCR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R301-006.C
ABSOLUTE MAXIMUM RATINGS (unless otherwise specified)
PARAMETERS
SYMBOL
RATINGS
UNIT
X0202
600
V
Peak Repetitive Forward and Reverse Blocking Voltage
(TJ=110℃, RGK=1kΩ)
X0202A
VDRM, VRRM
800
V
RMS On-State Current
(Ttab=95℃)
180℃ Conduction Angle
IT(RMS)
1.25
A
Average On-State Current
(Ttab=95℃)
180℃ Conduction Angle
IT(AV)
0.8
A
Non Repetitive Surge Peak on-State Current
(tp=8.3ms TJ=25℃)
ITSM
25
A
Non Repetitive Surge Peak on-State Current
(tp=10ms TJ=25℃)
ITSM
22.5
A
I
2t Value for Fusing (tp=10ms TJ=25℃)
I
2t
2.5
A
2S
Critical Rate Of Rise Of On-state Current
IG=2*IGT,tr≤100ns, f=60Hz, TJ=125℃
dI/dt
50
A/
μs
Peak Gate Current (p=20
μs TJ=125℃)
IGM
1.2
A
Average Gate Power Dissipation (TJ=125℃)
PG(AV)
0.2
W
Operating Junction Temperature Range
TJ
-40 ~ +125
℃
Storage Junction Temperature Range
TSTG
-40 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
SOT-223
25
℃
/W
Junction to Tab
TO-92
θJT
60
℃
/W
SOT-223
60
℃
/W
Junction to Ambient (S=5cm)
TO-92
θJA
150
℃
/W
S=Copper surface under tab
ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified)
PARAMETER
SYMBOL TEST CONDITIONS MIN
TYP MAX UNIT
TJ=25℃
5
μ A
Peak Forward or Reverse Blocking Current
TJ=125℃
IDRM, IRRM VDRM=VRRM, RGK=1kΩ
500
μ A
Peak Forward On-State Voltage
VTM
ITM= 2.5A, tp=380μs
1.45
V
Gate Trigger Current
IGT
VD=12V, RL=140Ω
200
μ A
Gate Trigger Voltage
VGT
VD=12V, RL=140Ω
0.8
V
Gate Non-Trigger Voltage
VGD
VD=VDRM, RL=3.3kΩ,
RGK=1kΩ, (TJ=125℃)
0.1
V
Holding Current
IH
IT=50mA, RGK=1kΩ
5
mA
Latch Current
IL
IG=1mA, RGK=1kΩ
6
mA
Critical Rate of Rise of Off-State Voltage
dv/dt
VD=67%VDRM,
RGK=1kΩ, (TJ=110℃)
10
V/
μs
Peak Reversed Gate Voltage
VRG
IRG=10μ A
8
V
Threshold Voltage
VTO
(TJ=125℃)
0.9
V
Dynamic Resistance
Rd
(TJ=125℃)
200
mΩ



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