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XL1225L-X-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 XL1225L-X-AE3-R
功能描述  MEDIUM POWER LOW VOLTAGE TRANSISTOR
PDF  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

XL1225L-X-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  XL1225L-X-AE3-R Datasheet HTML 1Page - Unisonic Technologies XL1225L-X-AE3-R Datasheet HTML 2Page - Unisonic Technologies XL1225L-X-AE3-R Datasheet HTML 3Page - Unisonic Technologies  
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background image
XL/ML1225
SCR
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
www.unisonic.com.tw
QW-R301-003.F
ABSOLUATE MAXIUM RATINGS (Ta= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
XL1225
400
Repetitive Peak Off-State Voltage
(TJ =40 ~ 125°C, RGK =1kΩ )
ML1225
VDRM
300
V
On-State Current (Tc=40
°C)
IT(RMS)
0.8
A
Average On-State Current (Half Cycle=180,Tc=40°C)
IT(AV)
0.5
A
Peak Reverse Gate Voltage (IGR=10
μA)
VGRM
1
V
Peak Gate Current (10
μs Max.)
IGM
0.1
A
Gate Dissipation (20ms Max.)
PG(AV)
150
mW
Junction Temperature
TJ
+125
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range
and assured by design from –20
°C ~85°C.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Off State Leakage Current
IDRM
VDRM(RGK=1KΩ), TJ =125°C
0.1
mA
Off State Leakage Current
IDRM
VDRM(RGK=1KΩ), TJ =25°C
1.0
μA
AT IT=0.4A
1.4
On State Voltage
VT
AT IT=0.8A
2.2
V
On State Threshold Voltage
VT(TO)
TJ =125°C
0.95
V
On State Slops Resistance
Rt
TJ =125°C
600
m
Gate Trigger Current
IGT
VD=7V
200
μA
Gate Trigger Voltage
VGT
VD=7V
0.8
V
Holding Current
IH
RGK=1KΩ
5
mA
Latching Current
IL
RGK=1KΩ
6
mA
Critical Rate of Voltage Rise
DV/DT
VD=0.67*VDRM(RGK=1KΩ),TJ =125°C
V/
μs
Critical Rate of Current Rise
DV/DT
IG=10mA, dIG/dt=0.1A/μs,TJ =125°C
A/
μs
Gate Controlled Delay Time
TGD
IG=10mA, dIG/dt=0.1A/μs
2.2
μs
Commutated Turn-off Time
TG
TJ =85°C, VD=0.67*VDRM, VR=35V, IT=IT(AV)
200
μs
CLASSIFICATION OF IGT
RANK
B
C
AA
AB
AC
AD
RANGE
50-100
100-200
8-15
15-20
20-25
25-50



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