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CPC1908J 数据表(PDF) 3 Page - Clare, Inc. |
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CPC1908J 数据表(HTML) 3 Page - Clare, Inc. |
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3 / 7 page ![]() PRELIMINARY 3 www.clare.com R07 CPC1908 2 Thermal Characteristics 2.1 Thermal Management Device high current characterization was performed using Kunze heat sink KU 1-159, phase change thermal interface material KU-ALC 5, and transistor clip KU 4-499/1. This combination provided an approximate junction-to-ambient thermal resistance of 12.5°C/W. 2.2 Heat Sink Calculation Higher load currents are possible by using lower thermal resistance heat sink combinations. Parameter Conditions Symbol Minimum Typical Maximum Units Thermal Resistance (Junction to Case) - RθJC - - 0.35 °C/W Thermal Resistance (Junction to Ambient) Free Air RθJA -33- °C/W Junction Temperature (Operating) - TJ -40 - 100 °C R θCA = - R θJC (T J - TA) IL(99) 2 I L 2 • P D(99) T J = Junction Temperature (°C), TJ ≤ 100°C * T A = Ambient Temperature (°C) I L(99) = Load Current with Case Temperature @ 99°C (ADC) I L = Desired Operating Load Current (ADC), IL ≤ IL(MAX) R θJC = Thermal Resistance, Junction to Case (°C/W) = 0.35°C/W R θCA = Thermal Resistance of Heat Sink & Thermal Interface Material , Case to Ambient (°C/W) P D(99) = Maximum power dissipation with case temperature held at 99ºC = 2.86W * Elevated junction temperature reduces semiconductor lifetime. Heat Sink Rating |
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