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B1S-G 数据表(PDF) 2 Page - Comchip Technology |
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B1S-G 数据表(HTML) 2 Page - Comchip Technology |
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2 / 4 page ![]() QW-BBR01 SMD General Purpose Bridge Rectifier Diode RATING AND CHARACTERISTIC CURVES (B05S-G thru B10S-G) Comchip Technology CO., LTD. QW-BBR01 Page 2 REV:D Ambient temperature, (°C) 160 140 120 100 80 60 40 20 Fig.1 - Forward Current Derating Curve 0.1 0.2 0.4 0.6 0.8 1.0 Mounted on PC board, single phase half wave 60Hz resistive or inductive load Number of Cycles at 60Hz 1 Fig.2 Maximum Non-Repetitive - Surge Current 0 10 20 30 40 10 100 Pulse width 8.3mS, single half-sine wave (JEDEC Method) Percent of Rated Peak Reverse Voltage, (%) 0 Fig.3 Typical Reverse Characteristics - 0.01 0.1 1.0 10 100 20 40 60 80 100 120 140 TJ=25°C TJ=125°C Instantaneous Forward Voltage, (V) 0 Fig.4 Typical Forward Characteristics - 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1.0 10 Reverse Voltage, (V) 1 Fig.5 Typical Junction Capacitance - 1.0 TJ=25°C Pulse Width=300μS TJ=25°C f=1MHz 10 100 10 100 |
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