CDBD620-G datasheet(1/4 Pages) COMCHIP

部件名	CDBD620-G

功能描述	Chip Schottky Barrier Rectifier

PDF	4 Pages

Scroll/Zoom	100%

制造商	COMCHIP [Comchip Technology]

网页	http://www.comchiptech.com

标志

1 / 4 page

Parameter

Symbol

Unit

Repetitive peak reverse voltage

Continuous reverse voltage

RMS voltage

Forward rectified current (See fig. 1)

Maximum forward voltage

IF=6.0A

Forward surge current, 8.3ms single

half sine-wave superimposed on rated

load (JEDEC method)

VR=VRRM TA=25°C

Thermal resistance

Junction to case

Reverse current

TA=100°C

VR=VRRM

Page 1

QW-BB032

Chip Schottky Barrier Rectifier

REV:A

Comchip Technology CO., LTD.

VRRM

VR

VRMS

IO

VF

IFSM

IR

RθJA

TJ

620-G

20

14

40

28

60

42

6.0

0.75

75

0.5

20

80

56

100

70

V

A

V

A

mA

°C/W

°C

0.55

0.85

Operating temperature

Storage temperature

TSTG

-65 to +175

°C

-55 to +125

-55 to +150

3.0

Features

1

3

2=4

Dimensions in inches and (millimeters)

DPAK

0.217(5.50)

0.201(5.10)

0.264(6.70)

0.248(6.30)

0.114(2.90)

0.098(2.50)

0.244(6.20)

0.228(5.80)

0.048(1.20)

0.031(0.80)

0.185(4.70)

0.169(4.30)

0.039(1.00)

0.031(0.80)

0.024(0.60)

0.016(0.40)

0.024(0.60)

0.016(0.40)

0.098(2.50)

0.083(2.10)

0.032(0.80)

0.016(0.40)

Reverse Voltage: 20 to 100 Volts

Forward Current: 6.0 Amp

RoHS Device

CDBD620-G Thru. CDBD6100-G

Mechanical data

Case: TO-252/DPAK, molded plastic.

-

Terminals: solderable per MIL-STD-750,

-

method 2026.

Polarity: Indicated by cathode band.

-

-Weight:0.34 gram(approx.).

Weunting Position: Any

-

Maximum Ratings (At Ta=25°C, unless otherwise noted)

CDBD

640-G

CDBD

650-G

CDBD

660-G

CDBD

680-G

CDBD

6100-G

CDBD

50

35

RθJC

Junction to ambient

°C/W

-Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

-Low profile surface mounted application in order to

optimize board space.

-Low power loss, high efficiency.

-High current capability, low forward voltage drop.

-High surge capability.

-Guardring for overvoltage protection.

-Ultra high-speed switching.

-Silicon epitaxial planar chip, metal silicon junction.

-Lead-free parts meet environmental standards of

MIL-STD-19500 /228

IR

mA

类似零件编号 - CDBD620-G

制造商	部件名	数据表	功能描述
Comchip Technology	CDBD640-HF	485Kb / 4P	Schottky Barrier Rectifiers REV:B

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