CDBFR0130R datasheet(1/4 Pages) COMCHIP

部件名	CDBFR0130R

功能描述	SMD Schottky Barrier Diode

PDF	4 Pages

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制造商	COMCHIP [Comchip Technology]

网页	http://www.comchiptech.com

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CDBFR0130R

Page 1

QW-A1114

REV:A

Comchip Technology CO., LTD.

A

mA

V

1

100

30

35

IO

VR

VRRM

IFSM

8.3ms single half sine-wave superimposed

on rate load(JEDEC method)

OC

+125

-40

TSTG

Tj

Storage temperature

Junction temperature

Average forward current

Reverse voltage

Repetitive peak reverse voltage

Forward current,surge peak

Parameter

Conditions

Symbol Min Typ Max Unit

O

Maximum Rating (at TA=25 C unless otherwise noted)

0.102(2.60)

0.095(2.40)

0.051(1.30)

0.043(1.10)

0.035(0.90)

0.027(0.70)

Dimensions in inches and (millimeter)

0.020(0.50) Typ.

0.040(1.00) Typ.

uA

V

0.5

0.45

IR

VF

Reverse current

Forward voltage

Parameter

Conditions

Symbol Min Typ Max Unit

VR = 10 V

IF = 10 mA

O

Electrical Characteristics (at TA=25 C unless otherwise noted)

SMD Schottky Barrier Diode

Features

-

-Designed for mounting on small surface.

-Extremely thin / leadless package.

-Majority carrier conduction.

Mechanical data

-Case: 1005/SOD-323F standard package

molded plastic.

-Terminals: Gold plated, solderable per

MIL-STD-750,method 2026.

-Marking code: cathode band & BQ

-Mounting position: Any

-Weight: 0.006 gram(approx.).

Low reverse current.

Io = 100 mA

VR = 30 Volts

RoHS Device

1005/SOD-323F

类似零件编号 - CDBFR0130R

制造商	部件名	数据表	功能描述
Comchip Technology	CDBFR0130R-HF	130Kb / 4P	SMD Schottky Barrier Diode

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类似说明 - CDBFR0130R

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More results

CDBFR0130R 数据表(PDF) 1 Page - Comchip Technology

CDBFR0130R 数据表(HTML) 1 Page - Comchip Technology

类似零件编号 - CDBFR0130R

类似说明 - CDBFR0130R

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链接网址

CDBFR0130R 数据表(PDF) 1 Page - Comchip Technology

CDBFR0130R 数据表(HTML) 1 Page - Comchip Technology

类似零件编号 - CDBFR0130R

类似说明 - CDBFR0130R

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数据表 下载

链接网址

数据表下载