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TIP107-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 TIP107-TN3-R
功能描述  PNP EPITAXIAL TRANSISTOR
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

TIP107-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

  TIP107-TN3-R Datasheet HTML 1Page - Unisonic Technologies TIP107-TN3-R Datasheet HTML 2Page - Unisonic Technologies TIP107-TN3-R Datasheet HTML 3Page - Unisonic Technologies TIP107-TN3-R Datasheet HTML 4Page - Unisonic Technologies  
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TIP107
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R203-023,C
ABSOLUTE MAXIMUM RATING (T
C=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-100
V
Collector-Emitter Voltage
VCES
-100
V
Emitter-Base Voltage
VEBO
-5
V
DC
IC
-8
A
Collector Current
Pulse
ICP
-15
A
Base Current
DC
IB
-1
A
Collector Power Dissipation
PC
80
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-65~+150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Emitter Sustaining Voltage
VCEO(SUS)
IC=-30mA, IB=0A
-100
V
Collector-Base Cut-Off Current
ICBO
VCB=-100V, IE=0A
-50
µA
Collector-Emitter Cut-Off Current
ICEO
VCE=-50V, IB=0A
50
µA
Emitter-Base Cut-Off Current
IEBO
VEB=-5V, IC=0A
-2
mA
ON CHARACTERISTICS
hFE1
VCE=-4V, IC=-3A
1000
20000
DC Current Gain
hFE2
VCE=-4V, IC=-8A
200
IC=-3A, IB=-6mA
-2
V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-8A, IB=-80mA
-2.5
V
Base-Emitter ON Voltage
VBE(ON)
VCE=-4V, IC=-8A
-2.8
V
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
Cob
VCB=-10V, IE=0A, f=0.1MHZ
300
pF



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