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CDST193-G 数据表(PDF) 1 Page - Comchip Technology |
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CDST193-G 数据表(HTML) 1 Page - Comchip Technology |
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1 / 2 page ![]() CDST193-G RoHS Device SMD Switching Diode QW-B0028 Page 1 REV:A Features -Low forward voltage: VF=0.9V (Typ.) -Fast reverse recovery time: trr=1.6nS (Typ.) Polarity: 1. ANODE 2. N.C. 3. CATHODE Marking: F3 Dimensions in inches and (millimeter) Parameter Value Unit Maximum Ratings (at Ta=25°C unless otherwise noted) Non-repetitive peak reverse voltage DC blocking voltage Forward continuous current Average rectified output current Power dissipation Junction temperature Storage temperature VRM VR IFM IO PD TJ TSTG 85 80 300* 100* 150 125 -55 ~ +125 V V mA mA mW OC OC SOT-23 3 1 2 0.119(3.00) 0.110(2.80) 0.056(1.40) 0.047(1.20) 0.083(2.10) 0.066(1.70) 0.044(1.10) 0.035(0.90) 0.020(0.50) 0.013(0.35) 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) 0.006(0.15) max 0.007(0.20) min *Unit rating. Total rating=Unit rating × 1.5 Symbol Parameter Conditions Min Max Unit Electrical Characteristics (at Ta=25°C unless otherwise noted) Reverse breakdown voltage Forward voltage Reverse current Capacitance between terminals Reverse recovery time V V IR=100μA IF=1mA IF=10mA IF=100mA VR=30V VR=80V VR=0V, f=1MHz IF=IR=10mA, Irr=0.1×IR V(BR)R VF1 VF2 VF3 IR1 IR2 CT trr 80 V 1.2 0.1 0.5 3.0 4.0 V V V V μA μA pF nS Min V 0.60 0.72 0.90 0.90 1.60 Symbol |
类似零件编号 - CDST193-G |
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类似说明 - CDST193-G |
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