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CDST226-G 数据表(PDF) 1 Page - Comchip Technology |
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CDST226-G 数据表(HTML) 1 Page - Comchip Technology |
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1 / 2 page ![]() CDST226-G Features O -Power dissipation: 150mW (@TA=25 C) Mechanical data -Case: SOT-23 -Terminals: Solder plated, solderable per MIL- STD-750, Method 2026. -Marking: C3 Page 1 QW-B0024 SMD Switching Diode RoHS Device Maximum Rating (at Ta=25°C unless otherwise noted) REV:B mA V V -55 ~ +125 100 TSTG VRM VRRM VRWM VR IO Power dissipation Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage Non-Repetitive peak reverse voltage Parameter Symbol Limits Unit Average rectified output current Storage temperature range PD 150 mW SOT-23 Dimensions in inches and (millimeters) 0.066 (1.70) 0.119 (3.00) 0.110 (2.80) 0.103 (2.60) 0.086 (2.20) 0.020 (0.50) 0.013 (0.35) 0.056 (1.40) 0.047 (1.20) 0.044 (1.10) 0.035 (0.90) 0.083 (2.10) 0.007 (0.20) min 0.006 (0.15) max 0.006 (0.15) 0.002 (0.05) 80 85 OC Electrical Characteristics (at Ta=25°C unless otherwise noted) pF V μA 4 1.2 IR CT Forward voltage Diode capacitance Reverse breakdown voltage Parameter Symbol Min Max Unit Reverse leakage current Test Conditions 80 VBR Forward continuous current Peak forward surge current @10mS IFM IFSM 300 2 mA A VF IR=100μA 0.5 VR=80V IF=100mA 3 V Reverse recovery time trr VR=0V, f=1MHz nS |
类似零件编号 - CDST226-G |
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类似说明 - CDST226-G |
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