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CSFM101-G 数据表(PDF) 1 Page - Comchip Technology

部件名 CSFM101-G
功能描述  SMD Super Fast Recovery Rectifiers
PDF  4 Pages
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制造商  COMCHIP [Comchip Technology]
网页  http://www.comchiptech.com
标志 COMCHIP - Comchip Technology

CSFM101-G 数据表(HTML) 1 Page - Comchip Technology

  CSFM101-G Datasheet HTML 1Page - Comchip Technology CSFM101-G Datasheet HTML 2Page - Comchip Technology CSFM101-G Datasheet HTML 3Page - Comchip Technology CSFM101-G Datasheet HTML 4Page - Comchip Technology  
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Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
Unit
Repetitive peak reverse voltage
Continuous reverse voltage
RMS voltage
Maximum Instantaneous forward
voltage at IF=1.0A
Forward surge current
Max. Reverse recovery time
Max.Reverse current
Typ. Thermal resistance
Operating junction temperature
Storage temperature range
Reverse Voltage: 50 to 600 Volts
Forward Current: 1.0 Amp
RoHS Device
Dimensions in inches and (millimeter)
Features
-Tiny plastic SMD package.
-High current capability.
-Super fast recovery time for switching mode application.
-High surge current capability.
-Glass passivated chip junction.
Mechanical data
-Epoxy: UL 94-V0 rated flame retardant.
-Terminals: Solderable per MIL-STD-750, method
2026.
-Polarity: Indicated by cathode band.
-Weight: 0.018 grams approx.
CSFM101-G Thru. CSFM105-G
Page 1
QW-BS005
SMD Super Fast Recovery Rectifiers
REV:C
Comchip Technology CO., LTD.
Mini SMA / SOD-123
0.154(3.90)
0.138(3.50)
0.012(0.30) Typ.
0.075(1.9)
0.059(1.5)
0.067(1.7)
0.051(1.3)
0.028(0.70) Typ.
0.028(0.7) Typ.
VRRM
VDC
VRMS
IO
VF
IFSM
Trr
IR
TJ
TSTG
RθJA
CSFM
101-G
CSFM
102-G
CSFM
103-G
CSFM
104-G
CSFM
105-G
50
50
35
100
100
70
200
200
140
1.0
25
35
5.0
42
-55 to +150
-65 to +175
400
400
280
600
600
420
V
V
V
A
V
A
nS
μA
°C/W
°C
°C
0.95
1.70
1.25
-Batch process design,excellent power dissipation
offers better reverse leakage current and thermal
resistance.
-Low profile surface mounted application in order
to optimize board space.
-Case: Molded plastic, JEDEC SOD-123/Mini SMA.
Max. forward rectified current
Ambient temperature=50°C
Conditions
superimposed on rated
load (JEDEC method)
8.3ms single half sine-wave
IF=0.5A , IR=1.0A
IRR=0.25A
VR=VRRM TJ=@25°C
VR=VRRM TJ=@100°C
Junction to ambient
Diode junction capacitance
CJ
10
pF
f=1MHZ and applied 4V DC
reverse voltage
100


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